Magnetoresistancecalculation

Inasemiconductorwithasinglecarriertype,themagnetoresistanceisproportionalto(1+(μB)2),whereμisthesemiconductormobility(unitsm2·V−1·s−1 ...,由VVPrudnikov著作·2016·被引用34次—AMonteCarlostudyoftrilayerandspin-valvemagneticstructureswithgiantmagnetoresistanceeffectsiscarriedout.,由SOlszewski著作·2011·被引用9次—Transversalmagnetoresistanceiscalculatedfornumerousmetalcasesonthebasisofsimpleelectront...

參考資訊如下
Magnetoresistance

In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB)2), where μ is the semiconductor mobility (units m2·V−1·s−1 ...

Monte Carlo calculations of the magnetoresistance in ...

由 VV Prudnikov 著作 · 2016 · 被引用 34 次 — A Monte Carlo study of trilayer and spin-valve magnetic structures with giant magnetoresistance effects is carried out.

Calculating the Magnetoresistance Effect in Metals

由 S Olszewski 著作 · 2011 · 被引用 9 次 — Transversal magnetoresistance is calculated for numerous metal cases on the basis of simple electron theory. Any metal can be represented by ...

General approach for anisotropic magnetoresistance ...

由 MF Velo 著作 · 2021 · 被引用 2 次 — The final resistance value is calculated considering the overall potential difference and current by simple ohmic relation. Similar approach was ...

Magnetoresistance

Magnetoresistance is defined as ΔR/R=[R(H)−R(H0)]/R(H0)×100(%), where R(H) is the resistance under the external magnetic field and R(H0) is the resistance at ...

Numerical calculation of magnetoresistance in a thin

由 DR de Ruiter 著作 · 2016 — The magnetoresistance is calculated for thin-film Bi2Te3, a topological insulator. As a first step, the band structure is obtained through ...

Ordinary magnetoresistance from first

Magnetoresistance in three

Equations 11.8 and 11.9 can be used to derive the Hall coefficient for an arbitrary number of carrier types. We shall use them to treat the simple case of ...

JM THEORY OF SOLIDS

By magnetoresistance we mean the increase in the electrical resist- ance of a metal or semiconductor when placed in a magnetic field. The effect of greatest ...